半导体集成电路制造中的单晶片加工与实时过程控制

A. Bowling
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引用次数: 3

摘要

对于300mm及更大直径的硅片加工,很明显单片加工将占据主导地位。除了目前用于光刻、等离子蚀刻和金属沉积的单晶圆工艺外,最近的研究表明,单晶圆工艺甚至将取代大多数间歇炉工艺和晶圆表面制备工艺。此外,原位传感器的实施将允许使用实时过程控制,以提高过程的可重复性和设备利用率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-Wafer Processing And Real-Time Process Control For Semiconductor Integrated Circuit Manufacturing
For 300 mm and larger diameter silicon wafer processing, it is clear that single-wafer processing will play a dominant role. In addition to current use of single-wafer processing for lithography, plasma etch, and metal deposition, recent research has shown that single-wafer processing will even displace most batch furnace processes and wafersurface preparation processes. In addition, the implementation of in-situ sensors will allow the use of real-time process control to improve process reproducibility and equipment utilization.
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