后接触晶体硅太阳能电池溶液衍生扩散阻挡层的研制

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-02-06 DOI:10.1109/IMFEDK.2014.6867047

Yunjian Jiang, Y. Ishikawa, S. Yoshinaga, T. Honda, Y. Uraoka

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引用次数: 0

摘要

为了降低背接触硅太阳电池的制造工艺成本，本研究采用聚硅氮烷溶液形成SiO2扩散阻挡层。采用椭偏光谱法测定了SiO2薄膜的厚度和折射率。薄片电阻测量和SIMS测量结果表明，聚硅氮烷衍生SiO2层对硼磷扩散过程具有良好的阻隔作用，而等离子体化学气相沉积SiO2层仅对磷扩散过程有效。

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Development of solution-derived diffusion barrier layer for back-contact crystalline silicon solar cell

In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO2 diffusion barrier layer in this study. The thickness and refractive index of SiO2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO2 layer presents excellent barrier effect for boron and phosphorous diffusion process, while SiO2 deposited by plasma chemical vapor deposition is available for only phosphorous diffusion process.

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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