间歇式大电流植入器栅电极的坍塌

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306753

Y. Kawasaki, K. Tokunaga, K. Horita, K. Mitsuda, A. Yamaguchi, A. Ueno, A. Teratani, T. Katayama, K. Hayami, A. Togawa, Y. Ohno, M. Yoneda

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引用次数: 6

摘要

我们在间歇式大电流植入器中寻找植入过程中栅电极可能出现的机械损伤，我们发现长度为60 nm ~ 85 nm的栅电极存在损伤，这是由于与粒子碰撞造成的。结果表明，损伤与自旋速度、栅极方向和光刻胶的存在有关。

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The collapse of gate electrode in high-current implanter of batch type

We looked for possible mechanical damage to the gate electrodes during implantation in high-current implanter of batch type and we found that there was damage in gate electrodes with a length of 60 nm to 85 nm, which is caused by collision with particles. It was confirmed that the damage is dependent on spin speed, gate direction and existence of photo resist.

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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