L. Tiemeijer, R. Van Langevelde, O. Gaillard, R. Havens, P. Baltus, P. Woerlee, D. Klaassen
{"title":"亚微米CMOS射频失真特性研究","authors":"L. Tiemeijer, R. Van Langevelde, O. Gaillard, R. Havens, P. Baltus, P. Woerlee, D. Klaassen","doi":"10.1109/ESSDERC.2000.194815","DOIUrl":null,"url":null,"abstract":"Distortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologies with minimum gatelengths down to 0.18 comply well with an accurate compact model. Using a new linearity figure of merit measurements are presented, which show that up to 1 GHz a high linearity at practical bias conditions is obtained because the distortion still predominantly originates from the nonlinear IV characteristics.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"RF Distortion Characterisation of Sub-Micron CMOS\",\"authors\":\"L. Tiemeijer, R. Van Langevelde, O. Gaillard, R. Havens, P. Baltus, P. Woerlee, D. Klaassen\",\"doi\":\"10.1109/ESSDERC.2000.194815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Distortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologies with minimum gatelengths down to 0.18 comply well with an accurate compact model. Using a new linearity figure of merit measurements are presented, which show that up to 1 GHz a high linearity at practical bias conditions is obtained because the distortion still predominantly originates from the nonlinear IV characteristics.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologies with minimum gatelengths down to 0.18 comply well with an accurate compact model. Using a new linearity figure of merit measurements are presented, which show that up to 1 GHz a high linearity at practical bias conditions is obtained because the distortion still predominantly originates from the nonlinear IV characteristics.
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