(特邀)ESD-RFIC协同设计方法

X. Guan, Xin Wang, Lin Lin, Guang Chen, A. Wang, Hainan Liu, Yumei Zhou, Hongyi Chen, Lee Yang, B. Zhao
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引用次数: 12

摘要

射频ESD保护电路设计是射频集成电路设计的一大挑战,其主要问题是由于ESD诱导的寄生而导致射频集成电路性能下降。由于缺乏适当的协同设计方法和ESD器件模型,将ESD影响纳入RF IC设计一直很困难。本文提出了一种新的ESD- rfic协同设计方法,包括RF ESD设计优化和表征,以及RFI /O重新匹配技术,旨在实现ESD保护RFIC电路的整体设计优化,并通过0.18 μ m RFCMOS的实际设计验证了这一点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
(Invited) ESD-RFIC Co-design methodology
RF ESD protection circuitry design emerges as a big challenge to RF IC design, where the main problem is associated with performance degradation of RF IC due to ESD-induced parasitics. It has been difficult to incorporate the ESD impacts into RF IC design due to lack of proper co-design approach and ESD device models. This paper presents a new ESD-RFIC co-design methodology, including RF ESD design optimization and characterization, as well as RF I/O re-matching techniques, developed to enable wholechip design optimization of ESD-protected RF IC circuits, which is verified by practical designs in 0.18 mum RFCMOS.
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