X. Guan, Xin Wang, Lin Lin, Guang Chen, A. Wang, Hainan Liu, Yumei Zhou, Hongyi Chen, Lee Yang, B. Zhao
{"title":"(特邀)ESD-RFIC协同设计方法","authors":"X. Guan, Xin Wang, Lin Lin, Guang Chen, A. Wang, Hainan Liu, Yumei Zhou, Hongyi Chen, Lee Yang, B. Zhao","doi":"10.1109/RFIC.2008.4561478","DOIUrl":null,"url":null,"abstract":"RF ESD protection circuitry design emerges as a big challenge to RF IC design, where the main problem is associated with performance degradation of RF IC due to ESD-induced parasitics. It has been difficult to incorporate the ESD impacts into RF IC design due to lack of proper co-design approach and ESD device models. This paper presents a new ESD-RFIC co-design methodology, including RF ESD design optimization and characterization, as well as RF I/O re-matching techniques, developed to enable wholechip design optimization of ESD-protected RF IC circuits, which is verified by practical designs in 0.18 mum RFCMOS.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"(Invited) ESD-RFIC Co-design methodology\",\"authors\":\"X. Guan, Xin Wang, Lin Lin, Guang Chen, A. Wang, Hainan Liu, Yumei Zhou, Hongyi Chen, Lee Yang, B. Zhao\",\"doi\":\"10.1109/RFIC.2008.4561478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RF ESD protection circuitry design emerges as a big challenge to RF IC design, where the main problem is associated with performance degradation of RF IC due to ESD-induced parasitics. It has been difficult to incorporate the ESD impacts into RF IC design due to lack of proper co-design approach and ESD device models. This paper presents a new ESD-RFIC co-design methodology, including RF ESD design optimization and characterization, as well as RF I/O re-matching techniques, developed to enable wholechip design optimization of ESD-protected RF IC circuits, which is verified by practical designs in 0.18 mum RFCMOS.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
射频ESD保护电路设计是射频集成电路设计的一大挑战,其主要问题是由于ESD诱导的寄生而导致射频集成电路性能下降。由于缺乏适当的协同设计方法和ESD器件模型,将ESD影响纳入RF IC设计一直很困难。本文提出了一种新的ESD- rfic协同设计方法,包括RF ESD设计优化和表征,以及RFI /O重新匹配技术,旨在实现ESD保护RFIC电路的整体设计优化,并通过0.18 μ m RFCMOS的实际设计验证了这一点。
RF ESD protection circuitry design emerges as a big challenge to RF IC design, where the main problem is associated with performance degradation of RF IC due to ESD-induced parasitics. It has been difficult to incorporate the ESD impacts into RF IC design due to lack of proper co-design approach and ESD device models. This paper presents a new ESD-RFIC co-design methodology, including RF ESD design optimization and characterization, as well as RF I/O re-matching techniques, developed to enable wholechip design optimization of ESD-protected RF IC circuits, which is verified by practical designs in 0.18 mum RFCMOS.