F. Edelman, Y. Komem, M. Stolzer, P. Werner, R. Butz
{"title":"纳米晶SiGe薄膜:结构与性能","authors":"F. Edelman, Y. Komem, M. Stolzer, P. Werner, R. Butz","doi":"10.1109/SIM.1996.570940","DOIUrl":null,"url":null,"abstract":"Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Nanocrystalline SiGe films: structure and properties\",\"authors\":\"F. Edelman, Y. Komem, M. Stolzer, P. Werner, R. Butz\",\"doi\":\"10.1109/SIM.1996.570940\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570940\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanocrystalline SiGe films: structure and properties
Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).
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