蓝宝石激光剥离垂直结构UV LED器件的制造与封装

Hao Zhu, Jianfei Xi, J. G. Liu
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引用次数: 1

摘要

随着UV LED技术的进步,越来越多的新应用出现。本文介绍了一种垂直结构紫外LED器件的设计、制造和封装。采用激光提升(LLO)方法制备45mil × 45mil LED,使我们能够去除外延中的蓝宝石衬底和吸收GaN层。通过这样做,最大限度地减少了外延内的紫外光吸收,器件的效率显着提高。在本文中,我们将描述实现更高效率的UVA芯片的制造工艺,并报告器件性能。并讨论了封装工艺及在UV条件下的失效机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and packaging of a vertical-structured UV LED device by laser lift-off of Sapphire
As UV LED technology advances, more and more new applications emerge. This paper describes design, fabrication and packaging of a vertical-structured UV LED device. Laser lift-off (LLO) method is used in the fabrication of a 45mil × 45mil LED, which allows us to remove the Sapphire substrate and absorptive GaN layers in the epitaxy. By doing this, the UV light absorption within the epitaxy is minimized and the efficacy of the device is significantly improved. In this paper, we will describe the fabrication process for achieving higher efficiency UVA chip, and report the device performance. Packaging technology and failure mechanisms under UV condition will also be discussed.
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