提高了高电流垂直功率Dmos的坚固性

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664675

M.J. Kim, Sayan Mukherjee, J. C. Young

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引用次数: 1

摘要

只提供摘要形式。试图通过设计和工艺创新来提高VDMOS的坚固性。为此，制作了击穿电压超过60 V的10-A VDMOS，进行了测试，并与其他器件进行了比较。与工业上的其他器件相比，所制备的VDMOS具有更高的功耗和坚固性。实验数据表明，高J/亚峰/性能使该VDMOS作为大电流功率器件更加可靠，并扩大了安全工作范围。>

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Improved Ruggedness of a High Current Vertical Power Dmos

Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high J/sub peak/ capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range. >

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[1991] 49th Annual Device Research Conference Digest

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