{"title":"250W HVHBT Doherty, 57% WCDMA效率，在2c11 6.5dB PAR下线性化至-55dBc","authors":"C. Steinbeiser, T. Landon, C. Suckling","doi":"10.1109/csics07.2007.16","DOIUrl":null,"url":null,"abstract":"A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"250W HVHBT Doherty with 57% WCDMA Efficiency Linearized to -55dBc for 2c11 6.5dB PAR\",\"authors\":\"C. Steinbeiser, T. Landon, C. Suckling\",\"doi\":\"10.1109/csics07.2007.16\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation.\",\"PeriodicalId\":370697,\"journal\":{\"name\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/csics07.2007.16\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/csics07.2007.16","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
250W HVHBT Doherty with 57% WCDMA Efficiency Linearized to -55dBc for 2c11 6.5dB PAR
A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation.
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