高空穴迁移率前门InAs/InGaSb-OI单结构硅基CMOS

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223667

K. Nishi, M. Yokoyama, H. Yokoyama, T. Hoshi, H. Sugiyama, M. Takenaka, S. Takagi

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引用次数: 10

摘要

我们在Si衬底上展示了采用超薄体(UTB) InAs/InGaSb在绝缘体(-OI)上的前门(FG) III-V单结构CMOS，其空穴迁移率(μeff)高达240 cm2V-1s-1。我们发现，缓冲hf (BHF)清洗的InAs MOS界面、Ni合金S/D和InAs/应变InGaSb-OI异质界面通道增强了μeff。利用FG InAs/InGaSb-OI n/p- mosfet实现了CMOS操作。

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High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

We have demonstrated the front-gate (FG) III-V single structure CMOS using ultra-thin body (UTB) InAs/InGaSb on insulator (-OI) on Si substrates with high hole mobility (μ_eff) of 240 cm²V^-1s^-1. We have found that the μ_eff is enhanced by the buffered-HF (BHF)-cleaned InAs MOS interfaces, Ni alloy S/D, and the InAs/strained InGaSb-OI hetero-interface channel. The CMOS operation using FG InAs/InGaSb-OI n/p-MOSFETs has been realized.

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2015 Symposium on VLSI Technology (VLSI Technology)

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