锁存仿真EMMI异常热点研究

Huang Chia-Sheng, Guo Xuan-Chao, Chen Zhi-Wei, Lin shin-chia, Zhang Sheng-ru, Tsai Bo-an
{"title":"锁存仿真EMMI异常热点研究","authors":"Huang Chia-Sheng, Guo Xuan-Chao, Chen Zhi-Wei, Lin shin-chia, Zhang Sheng-ru, Tsai Bo-an","doi":"10.1109/IPFA47161.2019.8984832","DOIUrl":null,"url":null,"abstract":"Latch-Up is a common circuit design problem in product reliability. Because of the poor design of the integrated circuit, the P-N-P-N junction in the chip is triggered by an applied current or voltage then to happen an internal latching current. The high temperature generated by the internal latching current will burn the internal circuit or cause the circuit to work abnormally. This paper is to discuss when the IC happen latch-up, we need to prepare different test sample ex. \"de-cap package sample front side sample\" / \"de-cap package sample back side COB (chip on board) sample\"/ Blue tape COB backside sample. We also compare the difference between each test samples. Finally we discuss EMMI (Emission Microscope) hot spot experiment for latch-up simulation that needs limited of current with each different COB sample. The stress current limitation will induce EMMI result, based on this fail model and improve the product Latch-up performance by reducing parasitic BJT (bipolar transistor) circuit current gain factor ß.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"EMMI Abnormal Hotspot Study for Latch up Simulation\",\"authors\":\"Huang Chia-Sheng, Guo Xuan-Chao, Chen Zhi-Wei, Lin shin-chia, Zhang Sheng-ru, Tsai Bo-an\",\"doi\":\"10.1109/IPFA47161.2019.8984832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Latch-Up is a common circuit design problem in product reliability. Because of the poor design of the integrated circuit, the P-N-P-N junction in the chip is triggered by an applied current or voltage then to happen an internal latching current. The high temperature generated by the internal latching current will burn the internal circuit or cause the circuit to work abnormally. This paper is to discuss when the IC happen latch-up, we need to prepare different test sample ex. \\\"de-cap package sample front side sample\\\" / \\\"de-cap package sample back side COB (chip on board) sample\\\"/ Blue tape COB backside sample. We also compare the difference between each test samples. Finally we discuss EMMI (Emission Microscope) hot spot experiment for latch-up simulation that needs limited of current with each different COB sample. The stress current limitation will induce EMMI result, based on this fail model and improve the product Latch-up performance by reducing parasitic BJT (bipolar transistor) circuit current gain factor ß.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

锁存是影响产品可靠性的常见电路设计问题。由于集成电路的设计不良,芯片中的P-N-P-N结被施加的电流或电压触发,然后发生内部锁存电流。内部锁存电流产生的高温会烧坏内部电路或使电路工作异常。本文主要讨论了当集成电路发生锁存时,需要准备不同的测试样品。“去盖封装样品正面样品”/“去盖封装样品背面COB(板载芯片)样品”/蓝胶带COB背面样品。我们还比较了每个测试样本之间的差异。最后讨论了不同COB样品需要限制电流的EMMI(发射显微镜)热点实验的锁存模拟。基于该失效模型,应力电流限制将诱发EMMI结果,并通过降低寄生BJT(双极晶体管)电路电流增益因子ß来改善产品锁相性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EMMI Abnormal Hotspot Study for Latch up Simulation
Latch-Up is a common circuit design problem in product reliability. Because of the poor design of the integrated circuit, the P-N-P-N junction in the chip is triggered by an applied current or voltage then to happen an internal latching current. The high temperature generated by the internal latching current will burn the internal circuit or cause the circuit to work abnormally. This paper is to discuss when the IC happen latch-up, we need to prepare different test sample ex. "de-cap package sample front side sample" / "de-cap package sample back side COB (chip on board) sample"/ Blue tape COB backside sample. We also compare the difference between each test samples. Finally we discuss EMMI (Emission Microscope) hot spot experiment for latch-up simulation that needs limited of current with each different COB sample. The stress current limitation will induce EMMI result, based on this fail model and improve the product Latch-up performance by reducing parasitic BJT (bipolar transistor) circuit current gain factor ß.
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