具有p-AlGaN接触层和ITO/Al电极的深紫外发光二极管的干涉效应

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943398

Rie Iwatsuki, H. Ishiguro, Maho Fujita, S. Kamiyama, M. Iwaya, T. Takeuchi, K. Nagata, K. Okuno, Y. Saito

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引用次数: 0

摘要

我们研究了透明的$\ mathm {p}^{+}$ -AlGaN接触层和廉价的ITO/Al电极的algan基深紫外led的光输出功率(LOP)值与p层厚度的关系。测得的LOP值随着p层厚度的减小而增大。这种增长是由于干扰效应。进一步降低内部吸收可以提高led的LOP。

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Interference effect in deep-ultraviolet light emitting diodes with p-AlGaN contact layers and ITO/Al electrodes

We investigated light output power (LOP) values of AlGaN-based deep ultraviolet LEDs with transparent $\mathrm{p}^{+}$ -AlGaN contact layers and inexpensive ITO/Al electrodes as a function of p-layer thickness. The measured LOP values were increased as the p-layer thickness was decreased. This increase was due to the interference effect. Further reduction of the internal absorption could improve the LOP of the LEDs.

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2022 28th International Semiconductor Laser Conference (ISLC)

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