A. Zokaei, M. A. Boroujeni, F. Razaghian, J. Alvankarian, M. Dousti
{"title":"3 - 5ghz超宽带共门低噪声放大器","authors":"A. Zokaei, M. A. Boroujeni, F. Razaghian, J. Alvankarian, M. Dousti","doi":"10.1109/ICCIRCUITSANDSYSTEMS.2012.6408274","DOIUrl":null,"url":null,"abstract":"In this paper, designing an ultra wideband 3-5 GHz CG LNA in two different styles with active and passive output matching using 0.18 μm CMOS process is presented. A wider bandwidth and reduced linearity is observed in active output whereas in passive mode a better performance of linearity but reduced bandwidth is achieved. As the circuitry in active mode to increase linearity and having a more excess transistor, dissipation is more in comparison with passive one. Using a shunt-series broadening technique at the output of the main stage has a roll of optimization of gain and controlling the bandwidth. By using a 1.8 v power supply a power gain of more than 10.5 dB, input reverse isolation less than -10.3 dB noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -4.4 dBm which dissipates less than 12 mw in active mode in 3-5.5 GHz frequency band is observed. In passive output mode with reduced dissipation, using 1.2 v power supply a power gain of more than 10 dB, input reverse isolation less than -10 dB, noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -2.5 dBm with dissipation of less than 6mw in 3-5 GHz frequency band is attained.","PeriodicalId":325846,"journal":{"name":"2012 IEEE International Conference on Circuits and Systems (ICCAS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 3–5 GHz ultra wideband common-gate low noise amplifier\",\"authors\":\"A. Zokaei, M. A. Boroujeni, F. Razaghian, J. Alvankarian, M. Dousti\",\"doi\":\"10.1109/ICCIRCUITSANDSYSTEMS.2012.6408274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, designing an ultra wideband 3-5 GHz CG LNA in two different styles with active and passive output matching using 0.18 μm CMOS process is presented. A wider bandwidth and reduced linearity is observed in active output whereas in passive mode a better performance of linearity but reduced bandwidth is achieved. As the circuitry in active mode to increase linearity and having a more excess transistor, dissipation is more in comparison with passive one. Using a shunt-series broadening technique at the output of the main stage has a roll of optimization of gain and controlling the bandwidth. By using a 1.8 v power supply a power gain of more than 10.5 dB, input reverse isolation less than -10.3 dB noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -4.4 dBm which dissipates less than 12 mw in active mode in 3-5.5 GHz frequency band is observed. In passive output mode with reduced dissipation, using 1.2 v power supply a power gain of more than 10 dB, input reverse isolation less than -10 dB, noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -2.5 dBm with dissipation of less than 6mw in 3-5 GHz frequency band is attained.\",\"PeriodicalId\":325846,\"journal\":{\"name\":\"2012 IEEE International Conference on Circuits and Systems (ICCAS)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Circuits and Systems (ICCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCIRCUITSANDSYSTEMS.2012.6408274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Circuits and Systems (ICCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCIRCUITSANDSYSTEMS.2012.6408274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 3–5 GHz ultra wideband common-gate low noise amplifier
In this paper, designing an ultra wideband 3-5 GHz CG LNA in two different styles with active and passive output matching using 0.18 μm CMOS process is presented. A wider bandwidth and reduced linearity is observed in active output whereas in passive mode a better performance of linearity but reduced bandwidth is achieved. As the circuitry in active mode to increase linearity and having a more excess transistor, dissipation is more in comparison with passive one. Using a shunt-series broadening technique at the output of the main stage has a roll of optimization of gain and controlling the bandwidth. By using a 1.8 v power supply a power gain of more than 10.5 dB, input reverse isolation less than -10.3 dB noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -4.4 dBm which dissipates less than 12 mw in active mode in 3-5.5 GHz frequency band is observed. In passive output mode with reduced dissipation, using 1.2 v power supply a power gain of more than 10 dB, input reverse isolation less than -10 dB, noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -2.5 dBm with dissipation of less than 6mw in 3-5 GHz frequency band is attained.