基于0.13 /spl mu/m CMOS的1.2 V无功反馈3.1-10.6 GHz超宽带低噪声放大器

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651086

M. Reiha, J. Long, J. Pekarik

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引用次数: 39

摘要

一个15.1 dB增益，2.1 dB噪声系数(最小)，低噪声放大器(LNA)制造在0.13 μ m CMOS覆盖整个3.1-10.6 GHz超宽带(UWB)。噪声系数在该波段的变化限制在±0.43 dB。无功反馈降低噪声系数，稳定增益，并在规定带宽上设置终端阻抗。偏置电流的再利用限制了0.87mm2 IC在1.2 V电源下的功耗为9 mW

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A 1.2 V reactive-feedback 3.1-10.6 GHz ultrawideband low-noise amplifier in 0.13 /spl mu/m CMOS

A 15.1 dB gain, 2.1 dB noise figure (min.), low-noise amplifier (LNA) fabricated in 0.13 mum CMOS covers the entire 3.1-10.6 GHz ultrawideband (UWB). Noise figure variation across this band is limited to plusmn0.43 dB. Reactive feedback reduces the noise figure, stabilizes the gain, and sets the terminal impedances over the prescribed bandwidth. Bias current re-use limits power consumption of the 0.87mm2 IC to 9 mW from a 1.2 V supply

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IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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