应用三维电磁仿真设计ku波段SiGe-HBT通硅功率放大器

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) Pub Date : 2017-12-01 DOI:10.1109/EDAPS.2017.8276964

Guoxiao Cheng, Zhiqun Li, Lei Luo, Yan Yao, Xiao-Hu He, Boyong He

{"title":"应用三维电磁仿真设计ku波段SiGe-HBT通硅功率放大器","authors":"Guoxiao Cheng, Zhiqun Li, Lei Luo, Yan Yao, Xiao-Hu He, Boyong He","doi":"10.1109/EDAPS.2017.8276964","DOIUrl":null,"url":null,"abstract":"This paper presents a power amplifier (PA) for Ku-band T/R modules using 0.13-wm SiGe BiCMOS process technology with through-silicon-via (TSV). The proposed PA is composed of two cascode stages using high performance (HP) SiGe HBTs to achieve a high gain and a relatively high output power. The TSV is utilized to provide a low-resistance and low-inductance path to the ground. And the 3-D electro-magnetic (EM) simulation is applied to narrow the gap between the simulated and the measured results. The proposed PA achieves a small-signal gain of 27dB with a 3-dB bandwidth covering from 14.8GHz to 18.2GHz. The output 1dB compression point (OP1dB) and the peak power-added efficiency (PAE) are 21.4dBm and 16.7% at 15GHz respectively.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Ku-band SiGe-HBT power amplifier with through-silicon-via applying 3-D EM simulation\",\"authors\":\"Guoxiao Cheng, Zhiqun Li, Lei Luo, Yan Yao, Xiao-Hu He, Boyong He\",\"doi\":\"10.1109/EDAPS.2017.8276964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a power amplifier (PA) for Ku-band T/R modules using 0.13-wm SiGe BiCMOS process technology with through-silicon-via (TSV). The proposed PA is composed of two cascode stages using high performance (HP) SiGe HBTs to achieve a high gain and a relatively high output power. The TSV is utilized to provide a low-resistance and low-inductance path to the ground. And the 3-D electro-magnetic (EM) simulation is applied to narrow the gap between the simulated and the measured results. The proposed PA achieves a small-signal gain of 27dB with a 3-dB bandwidth covering from 14.8GHz to 18.2GHz. The output 1dB compression point (OP1dB) and the peak power-added efficiency (PAE) are 21.4dBm and 16.7% at 15GHz respectively.\",\"PeriodicalId\":329279,\"journal\":{\"name\":\"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDAPS.2017.8276964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2017.8276964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种用于ku波段T/R模块的功率放大器(PA)，该放大器采用0.13 wm SiGe BiCMOS工艺，采用通硅孔(TSV)。该放大器由两个级联码组成，采用高性能(HP) SiGe hbt来实现高增益和相对较高的输出功率。TSV是用来提供一个低电阻和低电感的路径到地面。利用三维电磁仿真技术，缩小了仿真结果与实测结果之间的差距。该放大器的小信号增益为27dB，带宽为3db，覆盖14.8GHz至18.2GHz。15GHz时的输出1dB压缩点(OP1dB)和峰值功率附加效率(PAE)分别为21.4dBm和16.7%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of Ku-band SiGe-HBT power amplifier with through-silicon-via applying 3-D EM simulation

This paper presents a power amplifier (PA) for Ku-band T/R modules using 0.13-wm SiGe BiCMOS process technology with through-silicon-via (TSV). The proposed PA is composed of two cascode stages using high performance (HP) SiGe HBTs to achieve a high gain and a relatively high output power. The TSV is utilized to provide a low-resistance and low-inductance path to the ground. And the 3-D electro-magnetic (EM) simulation is applied to narrow the gap between the simulated and the measured results. The proposed PA achieves a small-signal gain of 27dB with a 3-dB bandwidth covering from 14.8GHz to 18.2GHz. The output 1dB compression point (OP1dB) and the peak power-added efficiency (PAE) are 21.4dBm and 16.7% at 15GHz respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)

自引率

0.00%

发文量