N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, J. Kováč, J. Jakabovic, D. Donoval
{"title":"有机TFT中SiO2和SiO2/聚苯乙烯叠层电介质的阈值电压不稳定性","authors":"N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, J. Kováč, J. Jakabovic, D. Donoval","doi":"10.1109/IRPS.2009.5173234","DOIUrl":null,"url":null,"abstract":"We study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulators. The threshold voltage variation is correlated with the gate pulse width and amplitude, and it is due to charge trapping, rather than permanent degradation. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The additional parylene layer brings benefits by strongly reducing the charge trapping/detrapping, and increasing the hole mobility and the drain current.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics\",\"authors\":\"N. Wrachien, A. Cester, A. Pinato, M. Meneghini, A. Tazzoli, G. Meneghesso, J. Kováč, J. Jakabovic, D. Donoval\",\"doi\":\"10.1109/IRPS.2009.5173234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulators. The threshold voltage variation is correlated with the gate pulse width and amplitude, and it is due to charge trapping, rather than permanent degradation. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The additional parylene layer brings benefits by strongly reducing the charge trapping/detrapping, and increasing the hole mobility and the drain current.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics
We study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulators. The threshold voltage variation is correlated with the gate pulse width and amplitude, and it is due to charge trapping, rather than permanent degradation. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The additional parylene layer brings benefits by strongly reducing the charge trapping/detrapping, and increasing the hole mobility and the drain current.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
