通过硅孔和三维晶圆/芯片堆叠技术

Kenji Takahashi, Masahiro Sekiguchi
{"title":"通过硅孔和三维晶圆/芯片堆叠技术","authors":"Kenji Takahashi, Masahiro Sekiguchi","doi":"10.1109/VLSIC.2006.1705326","DOIUrl":null,"url":null,"abstract":"Through silicon via and 3D wafer/chip stacking technology is thought to be the essential technology of the next generation high-end semiconductors such as high-speed microprocessors and high-speed memories. However, there are many issues regarding LSI design, process integration, thermal management, and cost are under development. Cost is one of the most critical issues to apply this technology to products. We propose to categorize the through via application into three areas, i.e. low-end, middle range and high-end. High-end area that covers fast MPUs and fast memories need very small through vias to realize high-speed signal transmission between devices. Low-end area that covers image sensors, stacked memories and discrete does not always need high-speed signal transmission, but they need ultimate low cost. Thus, we developed novel through via fabrication technology employing printed circuit board (PCB) fabrication processes. The technology was applied to a CMOS image sensor wafer and successfully demonstrated","PeriodicalId":366835,"journal":{"name":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"94","resultStr":"{\"title\":\"Through Silicon Via and 3-D Wafer/Chip Stacking Technology\",\"authors\":\"Kenji Takahashi, Masahiro Sekiguchi\",\"doi\":\"10.1109/VLSIC.2006.1705326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through silicon via and 3D wafer/chip stacking technology is thought to be the essential technology of the next generation high-end semiconductors such as high-speed microprocessors and high-speed memories. However, there are many issues regarding LSI design, process integration, thermal management, and cost are under development. Cost is one of the most critical issues to apply this technology to products. We propose to categorize the through via application into three areas, i.e. low-end, middle range and high-end. High-end area that covers fast MPUs and fast memories need very small through vias to realize high-speed signal transmission between devices. Low-end area that covers image sensors, stacked memories and discrete does not always need high-speed signal transmission, but they need ultimate low cost. Thus, we developed novel through via fabrication technology employing printed circuit board (PCB) fabrication processes. The technology was applied to a CMOS image sensor wafer and successfully demonstrated\",\"PeriodicalId\":366835,\"journal\":{\"name\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"94\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2006.1705326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2006.1705326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 94

摘要

通过硅孔和3D晶圆/芯片堆叠技术被认为是高速微处理器和高速存储器等下一代高端半导体的关键技术。然而,在大规模集成电路设计、工艺集成、热管理和成本等方面仍存在许多问题。成本是将该技术应用于产品的最关键问题之一。我们建议将通孔应用分为低端、中端和高端三个领域。高端区域,包括快速的微处理器和快速的存储器,需要非常小的通孔来实现设备之间的高速信号传输。低端领域包括图像传感器、堆叠存储器和分立存储器,它们并不总是需要高速信号传输,但它们需要极低的成本。因此,我们开发了采用印刷电路板(PCB)制造工艺的新型通孔制造技术。该技术已成功应用于CMOS图像传感器晶圆上
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Through Silicon Via and 3-D Wafer/Chip Stacking Technology
Through silicon via and 3D wafer/chip stacking technology is thought to be the essential technology of the next generation high-end semiconductors such as high-speed microprocessors and high-speed memories. However, there are many issues regarding LSI design, process integration, thermal management, and cost are under development. Cost is one of the most critical issues to apply this technology to products. We propose to categorize the through via application into three areas, i.e. low-end, middle range and high-end. High-end area that covers fast MPUs and fast memories need very small through vias to realize high-speed signal transmission between devices. Low-end area that covers image sensors, stacked memories and discrete does not always need high-speed signal transmission, but they need ultimate low cost. Thus, we developed novel through via fabrication technology employing printed circuit board (PCB) fabrication processes. The technology was applied to a CMOS image sensor wafer and successfully demonstrated
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