太赫兹工作中石墨烯基异质结晶体管晶体取向和杂质散射的影响

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948823

V. D. Lecce, R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani

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引用次数: 4

摘要

利用自行研制的基于量子输运耦合泊松方程的模拟器，研究了晶体取向对硅基石墨烯基异质结晶体管(GBHTs)太赫兹工作性能的影响。包括杂质散射的影响，发现即使考虑到掺杂导致的迁移率降低，太赫兹操作也是可能的。

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Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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