在180nm CMOS上采用主从DAC技术的1V 10位500KS/s高能效SAR ADC

Y. Yu, Fujun Huang, Chorng-Kuang Wang
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引用次数: 4

摘要

这项工作验证了主从数模转换器(M-S DAC)技术,与连续逼近寄存器模拟数字转换器(SAR ADC)中的传统电容阵列相比,该技术可显著降低93%的能量消耗。采用180nm CMOS标准工艺制作的芯片,证明了该技术避免了较大电容器的冗余充放电,在等效9.6位时信噪比为59.2dB,采样频率为500KS/s,芯面积为0.15mm2,电源电压为1V时,功耗为28 μW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1V 10-bit 500KS/s energy-efficient SAR ADC using Master-Slave DAC technique in 180nm CMOS
This work verifies the technique - Master-Slave digital to analog converter (M-S DAC) - for reducing the significant energy dissipation of 93% in comparison with the conventional capacitor array in successive approximation register analog to digital converter (SAR ADC). This technique avoiding the redundant charge and discharge in larger capacitors is demonstrated by a fabricated chip in 180nm CMOS standard process, and reaches performance including signal-to-noise-and-distortion ratio of 59.2dB in equivalent 9.6-bit, power consumption of 28 μW at the sampling frequency of 500KS/s with the conditions of supplying voltage of 1V in core area of 0.15mm2.
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