{"title":"在180nm CMOS上采用主从DAC技术的1V 10位500KS/s高能效SAR ADC","authors":"Y. Yu, Fujun Huang, Chorng-Kuang Wang","doi":"10.1109/VLSI-DAT.2014.6834904","DOIUrl":null,"url":null,"abstract":"This work verifies the technique - Master-Slave digital to analog converter (M-S DAC) - for reducing the significant energy dissipation of 93% in comparison with the conventional capacitor array in successive approximation register analog to digital converter (SAR ADC). This technique avoiding the redundant charge and discharge in larger capacitors is demonstrated by a fabricated chip in 180nm CMOS standard process, and reaches performance including signal-to-noise-and-distortion ratio of 59.2dB in equivalent 9.6-bit, power consumption of 28 μW at the sampling frequency of 500KS/s with the conditions of supplying voltage of 1V in core area of 0.15mm2.","PeriodicalId":267124,"journal":{"name":"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 1V 10-bit 500KS/s energy-efficient SAR ADC using Master-Slave DAC technique in 180nm CMOS\",\"authors\":\"Y. Yu, Fujun Huang, Chorng-Kuang Wang\",\"doi\":\"10.1109/VLSI-DAT.2014.6834904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work verifies the technique - Master-Slave digital to analog converter (M-S DAC) - for reducing the significant energy dissipation of 93% in comparison with the conventional capacitor array in successive approximation register analog to digital converter (SAR ADC). This technique avoiding the redundant charge and discharge in larger capacitors is demonstrated by a fabricated chip in 180nm CMOS standard process, and reaches performance including signal-to-noise-and-distortion ratio of 59.2dB in equivalent 9.6-bit, power consumption of 28 μW at the sampling frequency of 500KS/s with the conditions of supplying voltage of 1V in core area of 0.15mm2.\",\"PeriodicalId\":267124,\"journal\":{\"name\":\"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-DAT.2014.6834904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-DAT.2014.6834904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1V 10-bit 500KS/s energy-efficient SAR ADC using Master-Slave DAC technique in 180nm CMOS
This work verifies the technique - Master-Slave digital to analog converter (M-S DAC) - for reducing the significant energy dissipation of 93% in comparison with the conventional capacitor array in successive approximation register analog to digital converter (SAR ADC). This technique avoiding the redundant charge and discharge in larger capacitors is demonstrated by a fabricated chip in 180nm CMOS standard process, and reaches performance including signal-to-noise-and-distortion ratio of 59.2dB in equivalent 9.6-bit, power consumption of 28 μW at the sampling frequency of 500KS/s with the conditions of supplying voltage of 1V in core area of 0.15mm2.