{"title":"一种新颖的片上超低功耗温度传感方案","authors":"S. Chouhan, K. Halonen","doi":"10.1109/NORCHP.2012.6403108","DOIUrl":null,"url":null,"abstract":"In this work, a CMOS based temperature sensor with Nano-watt power consumption is presented. The proposed scheme utilizes sensitivity of MOS towards temperature in subthreshold region. Sensor is composed of PMOS and NMOS group which subsequently generates voltages that are having positive and negative temperature coefficients respectively. It has been observed that on subtracting these voltages, resultant shows, highly linear dependence with temperature. The proposed scheme is implemented using AMS 0.35 μm standard CMOS technology, and it shows wide temperature sensing ranges from -40 °C to +140 °C with a power consumption of tens of Nano watts.","PeriodicalId":332731,"journal":{"name":"NORCHIP 2012","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Novel on-chip ultra-low power temperature sensing scheme\",\"authors\":\"S. Chouhan, K. Halonen\",\"doi\":\"10.1109/NORCHP.2012.6403108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a CMOS based temperature sensor with Nano-watt power consumption is presented. The proposed scheme utilizes sensitivity of MOS towards temperature in subthreshold region. Sensor is composed of PMOS and NMOS group which subsequently generates voltages that are having positive and negative temperature coefficients respectively. It has been observed that on subtracting these voltages, resultant shows, highly linear dependence with temperature. The proposed scheme is implemented using AMS 0.35 μm standard CMOS technology, and it shows wide temperature sensing ranges from -40 °C to +140 °C with a power consumption of tens of Nano watts.\",\"PeriodicalId\":332731,\"journal\":{\"name\":\"NORCHIP 2012\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"NORCHIP 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NORCHP.2012.6403108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"NORCHIP 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2012.6403108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel on-chip ultra-low power temperature sensing scheme
In this work, a CMOS based temperature sensor with Nano-watt power consumption is presented. The proposed scheme utilizes sensitivity of MOS towards temperature in subthreshold region. Sensor is composed of PMOS and NMOS group which subsequently generates voltages that are having positive and negative temperature coefficients respectively. It has been observed that on subtracting these voltages, resultant shows, highly linear dependence with temperature. The proposed scheme is implemented using AMS 0.35 μm standard CMOS technology, and it shows wide temperature sensing ranges from -40 °C to +140 °C with a power consumption of tens of Nano watts.
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