{"title":"110MHz CMOS跨导c低通滤波器","authors":"B. Nauta, E. Seevinck","doi":"10.1109/ESSCIRC.1989.5468134","DOIUrl":null,"url":null,"abstract":"A CMOS third order elliptic low-pass filter with a 110MHz cut-off frequency realized in a 3¿m-process is presented. The filter consists of differential transconductance elements and capacitors. The transconductance element has good linearity properties and an excellent high frequency behaviour thanks to the absence ofinternal nodes. Both the cut-off frequency and the Q-factors can be tuned.","PeriodicalId":187183,"journal":{"name":"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 110MHz CMOS Transconductance-C Low-Pass Filter\",\"authors\":\"B. Nauta, E. Seevinck\",\"doi\":\"10.1109/ESSCIRC.1989.5468134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS third order elliptic low-pass filter with a 110MHz cut-off frequency realized in a 3¿m-process is presented. The filter consists of differential transconductance elements and capacitors. The transconductance element has good linearity properties and an excellent high frequency behaviour thanks to the absence ofinternal nodes. Both the cut-off frequency and the Q-factors can be tuned.\",\"PeriodicalId\":187183,\"journal\":{\"name\":\"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1989.5468134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1989.5468134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS third order elliptic low-pass filter with a 110MHz cut-off frequency realized in a 3¿m-process is presented. The filter consists of differential transconductance elements and capacitors. The transconductance element has good linearity properties and an excellent high frequency behaviour thanks to the absence ofinternal nodes. Both the cut-off frequency and the Q-factors can be tuned.