{"title":"PBNN多层压电驱动器的制备与表征","authors":"D. R. Ciien, M. Zhu, W. Zhang, L. G.R.","doi":"10.1109/ISE.1996.578259","DOIUrl":null,"url":null,"abstract":"The preparation and characterization of multilayer actuators with fifty layers (100 /spl mu/m in thickness) of piezoelectric [(Pb/sub (1-x/)Ba/sub x/)/sub 6-y/(NaLi)/sub y/Nb/sub 10/O/sub 30/] (PBNN) were reported, which were prepared by tape-casting and cofired with internal Pd30+Ag70 electrodes. The PBNN wafers prepared by the tape-casting technique were compared with those prepared by conventional dry-pressure techniques. Delaminations occurring in the layers of some actuators were observed and discussed. The obtained high linearity and low hysteresis in the displacement-applied field, the symmetric displacement under positive and negative applied field, were discussed in relation to the crystal and domain structure.","PeriodicalId":425004,"journal":{"name":"9th International Symposium on Electrets (ISE 9) Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and characterization of PBNN multilayer piezoelectric actuator\",\"authors\":\"D. R. Ciien, M. Zhu, W. Zhang, L. G.R.\",\"doi\":\"10.1109/ISE.1996.578259\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The preparation and characterization of multilayer actuators with fifty layers (100 /spl mu/m in thickness) of piezoelectric [(Pb/sub (1-x/)Ba/sub x/)/sub 6-y/(NaLi)/sub y/Nb/sub 10/O/sub 30/] (PBNN) were reported, which were prepared by tape-casting and cofired with internal Pd30+Ag70 electrodes. The PBNN wafers prepared by the tape-casting technique were compared with those prepared by conventional dry-pressure techniques. Delaminations occurring in the layers of some actuators were observed and discussed. The obtained high linearity and low hysteresis in the displacement-applied field, the symmetric displacement under positive and negative applied field, were discussed in relation to the crystal and domain structure.\",\"PeriodicalId\":425004,\"journal\":{\"name\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISE.1996.578259\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Electrets (ISE 9) Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.1996.578259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation and characterization of PBNN multilayer piezoelectric actuator
The preparation and characterization of multilayer actuators with fifty layers (100 /spl mu/m in thickness) of piezoelectric [(Pb/sub (1-x/)Ba/sub x/)/sub 6-y/(NaLi)/sub y/Nb/sub 10/O/sub 30/] (PBNN) were reported, which were prepared by tape-casting and cofired with internal Pd30+Ag70 electrodes. The PBNN wafers prepared by the tape-casting technique were compared with those prepared by conventional dry-pressure techniques. Delaminations occurring in the layers of some actuators were observed and discussed. The obtained high linearity and low hysteresis in the displacement-applied field, the symmetric displacement under positive and negative applied field, were discussed in relation to the crystal and domain structure.