深亚微米t栅极和MgCaO原子层外延栅极介质的AlGaN/GaN MOSHEMTs的直流和射频特性

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI:10.1109/DRC.2016.7548407

Hong Zhou, Karynn A. Sutherlin, X. Lou, Sang Bok Kim, K. Chabak, R. Gordon, P. Ye

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引用次数: 1

摘要

采用晶格匹配ALE MgCaO作为栅极电介质，展示了高性能深亚微米t栅AlGaN/GaN MOSHEMTs。120 nm-Lg MOSHEMT的IDMAX为1.2 A/mm, Ron为1.5 Ω·mm, ft/fmax为101/150 GHz，迟滞和IG可忽略不计，显示出作为GaN MOS技术的前景。普渡大学的工作由AFOSR支持，哈佛大学的工作由ONR支持。

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DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric

High performance deep sub-micron T-gate AlGaN/GaN MOSHEMTs are demonstrated using lattice matched ALE MgCaO as gate dielectric. The 120 nm-Lg MOSHEMT has an I_DMAX of 1.2 A/mm, R_on of 1.5 Ω·mm, a f_t/f_max of 101/150 GHz, with negligible hysteresis and I_G, showing the promise as a GaN MOS technology. The work at Purdue University is supported by AFOSR and the work at Harvard University is supported by ONR.

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2016 74th Annual Device Research Conference (DRC)

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