AlN钝化增强AlGaN/GaN HEMT漏极电流

SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019 Pub Date : 2019-12-17 DOI:10.1063/1.5141433

L. Arivazhagan, D. Nirmal, J. Ajayan, D. Godfrey, J. Rajkumar, S. B. Lakshmi

{"title":"AlN钝化增强AlGaN/GaN HEMT漏极电流","authors":"L. Arivazhagan, D. Nirmal, J. Ajayan, D. Godfrey, J. Rajkumar, S. B. Lakshmi","doi":"10.1063/1.5141433","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN HEMT with AlN passivation is proposed and investigated. Effectiveness of AlN passivation is analyzed and compared with SiN, SiO2, Al2O3, and HfO2 passivation materials. The performance of these passivation materials are analyzed using Technological Computer Aided Design (TCAD) simulation. The potential, polarization charge, energy band diagram of the GaN HEMT are analyzed. GaN device with AlN passivation exhibits higher drain current than other passivation materials. Hence, AlN passivation is an excellent passivation material for GaN-HEMT in higher drive current application.","PeriodicalId":182421,"journal":{"name":"SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation\",\"authors\":\"L. Arivazhagan, D. Nirmal, J. Ajayan, D. Godfrey, J. Rajkumar, S. B. Lakshmi\",\"doi\":\"10.1063/1.5141433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaN/GaN HEMT with AlN passivation is proposed and investigated. Effectiveness of AlN passivation is analyzed and compared with SiN, SiO2, Al2O3, and HfO2 passivation materials. The performance of these passivation materials are analyzed using Technological Computer Aided Design (TCAD) simulation. The potential, polarization charge, energy band diagram of the GaN HEMT are analyzed. GaN device with AlN passivation exhibits higher drain current than other passivation materials. Hence, AlN passivation is an excellent passivation material for GaN-HEMT in higher drive current application.\",\"PeriodicalId\":182421,\"journal\":{\"name\":\"SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.5141433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5141433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出并研究了AlN钝化的AlGaN/GaN HEMT。分析了AlN的钝化效果，并与SiN、SiO2、Al2O3和HfO2钝化材料进行了对比。采用技术计算机辅助设计(TCAD)仿真分析了这些钝化材料的性能。分析了GaN HEMT的电势、极化电荷和能带图。与其他钝化材料相比，采用AlN钝化的GaN器件具有更高的漏极电流。因此，AlN钝化是GaN-HEMT在高驱动电流应用中良好的钝化材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation

AlGaN/GaN HEMT with AlN passivation is proposed and investigated. Effectiveness of AlN passivation is analyzed and compared with SiN, SiO2, Al2O3, and HfO2 passivation materials. The performance of these passivation materials are analyzed using Technological Computer Aided Design (TCAD) simulation. The potential, polarization charge, energy band diagram of the GaN HEMT are analyzed. GaN device with AlN passivation exhibits higher drain current than other passivation materials. Hence, AlN passivation is an excellent passivation material for GaN-HEMT in higher drive current application.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019

自引率

0.00%

发文量