手机用CMOS驱动电路上GaN LED的异构集成

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421431

S. L. Selvaraj, Lulu Peng, Zou Qiong, Y. K. Seng, D. Disney

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引用次数: 4

摘要

我们已经展示了直接在硅CMOS驱动电路上的GaN led的异构集成，以进一步小型化系统，如智能手机闪存。这种新颖的完全集成的系统包括闪光和火炬模式功能。集成的LED和驱动芯片表现出良好的性能，最高效率为85.7%。本文将进一步讨论其概念、电路设计集成过程和电气性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heterogeneous Integration of GaN LED on CMOS Driver Circuit for Mobile Phone Applications

We have demonstrated the heterogeneous integration of GaN LEDs directly on top of silicon CMOS driver circuitry for further miniaturization of systems such as the smartphone flash. This novel fully-integrated system includes flash and torch mode functions. The integrated LED and driver chip shows good performance with maximum efficiency of 85.7%. The concept, circuit design integration process, and electrical performance will be further discussed in this paper.

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来源期刊

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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