{"title":"低功耗单电子或/或门工作在10GHz","authors":"T. Tsiolakis, G. Alexiou, Nikos Konofaos","doi":"10.1109/ISVLSI.2010.78","DOIUrl":null,"url":null,"abstract":"The design and simulation of a single-electron OR/NOR gate is being presented using a Monte Carlo based tool. Both the OR/NOR behavior and the stability were verified while the free energy behavior of the circuit was also examined. The results confirmed that the circuit behaved as an OR/NOR gate, depicting improved characteristics than previously published single electron OR circuits, achieving a really fast operational speed at low power. Moreover, the noise through the circuit was nearly diminished, while a stable behavior of the circuit was verified without any noise present at the output points.","PeriodicalId":187530,"journal":{"name":"2010 IEEE Computer Society Annual Symposium on VLSI","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low Power Single Electron Or/Nor Gate Operating at 10GHz\",\"authors\":\"T. Tsiolakis, G. Alexiou, Nikos Konofaos\",\"doi\":\"10.1109/ISVLSI.2010.78\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and simulation of a single-electron OR/NOR gate is being presented using a Monte Carlo based tool. Both the OR/NOR behavior and the stability were verified while the free energy behavior of the circuit was also examined. The results confirmed that the circuit behaved as an OR/NOR gate, depicting improved characteristics than previously published single electron OR circuits, achieving a really fast operational speed at low power. Moreover, the noise through the circuit was nearly diminished, while a stable behavior of the circuit was verified without any noise present at the output points.\",\"PeriodicalId\":187530,\"journal\":{\"name\":\"2010 IEEE Computer Society Annual Symposium on VLSI\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Computer Society Annual Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2010.78\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2010.78","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Power Single Electron Or/Nor Gate Operating at 10GHz
The design and simulation of a single-electron OR/NOR gate is being presented using a Monte Carlo based tool. Both the OR/NOR behavior and the stability were verified while the free energy behavior of the circuit was also examined. The results confirmed that the circuit behaved as an OR/NOR gate, depicting improved characteristics than previously published single electron OR circuits, achieving a really fast operational speed at low power. Moreover, the noise through the circuit was nearly diminished, while a stable behavior of the circuit was verified without any noise present at the output points.
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