45纳米及以上BEOL互连超低k集成的挑战

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090403

H. Liu, J. Widodo, S. L. Liew, Z. H. Wang, Y. H. Wang, B. Lin, L. Wu, C. Seet, W. Lu, C. H. Low, W. Liu, M. S. Zhou, L. Hsia

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引用次数: 5

摘要

本文介绍了45纳米及以上的超低k (ULK)后端线(BEOL)互连中的一些主要集成挑战。讨论了紫外光(UV)固化引起的氮掺杂碳化硅(SiCN)成分变化、ULK机械强度差、反应离子蚀刻(RIE)和势垒沉积等离子体在沟槽侧壁和底部引起的损伤，以及铜(Cu)工艺的间隙填充限制等问题。给出了ULK集成的物理特性和电阻-电容(RC)结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Challenges of Ultra low-k integration in BEOL interconnect for 45nm and beyond

This paper presents some major integration challenges in Ultra low-k (ULK) Back-End-Of-Line (BEOL) interconnects for 45nm and beyond. The discussions mainly address the challenges that arise from ultra violet (UV) curing that cause changes in the composition of Nitrogen doped Silicon Carbide (SiCN), poor mechanical strength of ULK, Reactive Ion Etching (RIE) and barrier deposition plasma induced damage at the sidewall and the bottom of the trench, and gap-fill limitation of the copper (Cu) process. The physical characterization and Resistance-Capacitance (RC) results of the ULK integration are also presented.

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2009 IEEE International Interconnect Technology Conference

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