{"title":"薄半导体层中完全载流子密度和漂移迁移率曲线的测定","authors":"R. S. Huang, P. Ladbrooke","doi":"10.1049/IJ-SSED.1979.0009","DOIUrl":null,"url":null,"abstract":"A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of complete carrier density and drift mobility profiles in thin semiconductor layers\",\"authors\":\"R. S. Huang, P. Ladbrooke\",\"doi\":\"10.1049/IJ-SSED.1979.0009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED.1979.0009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1979.0009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers
A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1
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