用于d波段发射机的110-132GHz VCO，峰值输出功率为1.5dBm，调谐范围为18.2%，采用130nm SiGe BiCMOS

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 1900-01-01 DOI:10.1109/SIRF.2016.7445469

Sriram Muralidharan, Kefei Wu, M. Hella

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引用次数: 7

摘要

本文介绍了一种应用于d波段发射机的130nm SiGe BiCMOS毫米波压控振荡器的设计和测量结果。该VCO设计使用两个工作频率为60 GHz的振荡器，并以推推式配置排列，以提供d波段输出。宽调谐范围是通过采用超突变结变容器实现的。该VCO在127GHz时为50Ω负载提供1.44dBm的峰值输出功率，121GHz中心调谐范围为18.2%。该芯片从1.5V电源中消耗42mW的直流功率，因此实现了3.3%的峰值DC- rf效率。

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A 110–132GHz VCO with 1.5dBm peak output power and 18.2% tuning range in 130nm SiGe BiCMOS for D-Band transmitters

This paper presents the design and measurement results of a mm-wave voltage controlled oscillator in 130nm SiGe BiCMOS technology for application in D-Band transmitters. The VCO is designed using two oscillators operating at fo=60 GHz and arranged in a push-push configuration, to provide a D-Band output. The wide tuning range is achieved by employing a hyper-abrupt junction varactor. The VCO delivers a peak output power of 1.44dBm at 127GHz to a 50Ω load with a tuning range of 18.2% centered at 121GHz. The chip consumes 42mW of DC power from a 1.5V supply and hence achieves a peak DC-to-RF efficiency of 3.3%.

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来源期刊

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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