热稳健的cmos感知Ge mosfet，在单取向Ge衬底上具有高载流子密度的高迁移率

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894394

C. H. Lee, C. Lu, T. Nishimura, K. Nagashio, A. Toriumi

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引用次数: 14

摘要

本文介绍了单取向Ge衬底上优越的电子和空穴迁移率，用于紧凑和经济高效的CMOS应用。讨论了电子和空穴迁移率的不同散射机制，以理解载流子输运物理。在此基础上，在亚纳米EOT Ge(111)场效应管中，在Ns=1e13 cm-2时，电子迁移率最高为437 cm2/Vs，空穴迁移率最高为213 cm2/Vs。

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Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

This paper presents the superior electron and hole mobility on a single orientation Ge substrate for compact and cost-effective CMOS applications. The different scattering mechanisms of electron and hole mobility are discussed for understanding carrier transport physics. On the basis of this understanding, the highest electron mobility of 437 cm2/Vs and hole mobility of 213 cm2/Vs at Ns=1e13 cm-2 in sub-nm EOT Ge(111) FETs are demonstrated.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量