Onto a higher power handling for very high frequency direct antenna modulation

Antennas constrained to platforms that require miniaturisation, significantly smaller than the wavelength of the desired frequency, are inefficient radiators and limited to narrowband operations. To overcome these limitations, a technique called direct antenna modulation (DAM), is incorporated with electrically small antennas to enable transmission of high-bandwidth signals through narrowband antennas. DAM utilises switching circuitry to directly modulate the antenna at its corresponding peak energy moments all while being synchronised to the input signal, yet previous iterations were susceptible to low transmit powers due to limitations in the switching network's power handling capability and tremendous coupling between transistor ports that results in an ambiguous switching signal at the gate. A frequency shift keyed (FSK) DAM antenna topology is proposed, which is capable of high-power transmission through a geometrically symmetrical switching circuitry integrating pairs of complementary GaN transistors. The symmetry assists in removing coupling among transistor ports to effectively switch the transistors OFF and ON without regard to the input RF power. The authors’ theoretical analysis agrees with our simulations and far-field measurements which show the FSK DAM antenna topology is capable of transmit powers up to −1 dBm given a 42 dBm of input RF power.