在AlGaN/GaN异质结上采用浮动金属环的高击穿电压GaN肖特基势垒二极管

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487997

Seung-Chul Lee, M. Ha, J. Her, Soo-Seong Kim, Jiyong Lim, K. Seo, M. Han

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引用次数: 22

摘要

我们报道了一种采用浮动金属环(FMRs)的AlGaN/GaN异质结的横向GaN sdd，该sdd具有非常高的击穿电压，低泄漏电流和低导通电压。我们在没有任何额外的工艺步骤的情况下获得了930V的非常高的击穿电压。我们还优化了FMR的设计参数，如主结与FMR之间的空间和环数。我们的实验结果表明，FMR是相当简单的，可以适用于横向氮化镓SBD。

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High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction

We have reported a lateral GaN SBDs on AlGaN/GaN hetero-junction employing floating metal rings (FMRs) which exhibit a very high breakdown voltage, a low leakage current and a low on-state voltage. We have obtained a very high breakdown voltage of 930V without any additional process step. We have also optimized design parameters of FMR, such as the space between main junction and FMR and the number of rings. Our experimental results show that FMR which is rather simple may be suitable for lateral GaN SBD.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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