基于多晶硅锗微辐射热计阵列的红外摄像机

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI:10.1109/LAEDC54796.2022.9908199

M. Moreno, D. Ferrusca, J. Rangel, J. Castro, J. Hernández, R. Jimenez, Alfonso Torres, Arturo Ponce, A. Morales, Rodrigo Gonzalez-Cruz, Eduardo Mota-Galvan, Gabriela Amador-Perez

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引用次数: 0

摘要

在这项工作中，我们报告了红外相机不同部分的开发，其中包括基于多晶硅锗热感膜(pm-SiGe:H)的微测热计阵列的制造，其热阻系数(TCR)高达- 6.6% /K。该阵列由4800个像素组成，分布为80 × 60，每个像素的大小为50 × 50 μm2。介绍了基于FPGA的读出电路的第一阶段设计，并给出了红外滤光片的设计和真空摄像机的设计。

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Towards an infrared camera based on polymorphous silicon-germanium microbolometer arrays

In this work we report the development of different parts of an infrared camera, which includes the fabrication of a microbolometer array based on polymorphous silicon-germanium thermosensing films (pm-SiGe:H) with large values of the Thermal coefficient of resistance (TCR), as large as −6.6 %/K. The array is composed of 4800 pixels, distributed as 80 × 60, with each pixels of size of 50 × 50 μm2. As well the first stages of the readout circuit based on a FPGA is described, and the infrared filters lens design and the vacuum camera design also are shown.

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2022 IEEE Latin American Electron Devices Conference (LAEDC)

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