非对称耦合硅线中接地面的实验研究

IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565) Pub Date : 2001-10-01 DOI:10.1109/EPEP.2001.967672

U. Arz, D.F. Williams, H. Grabinski

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引用次数: 2

摘要

我们使用一种专为高导电性衬底上的耦合线设计的测量方法来表征在损耗硅上制造的相同的不对称耦合线，在两个信号导体下面有和没有金属化平面。该研究说明了返回路径在确定线路间电磁耦合中的重要作用。

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Experimental study of the ground plane in asymmetric coupled silicon lines

We use a measurement method designed for coupled lines on highly conductive substrates to characterize identical asymmetric coupled lines fabricated on lossy silicon with and without a metallization plane beneath the two signal conductors. The study illustrates the important role of the return path in determining the electromagnetic coupling between the lines.

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IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565)

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