基于0.18µm工艺D-Latch的超低功耗128字节存储器设计

Saurabh Tripathi, Nupur Jain, B. Mishra
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引用次数: 0

摘要

本文主要提出了一种基于D-Latch的128字节全定制存储器阵列。提出了一种鲁棒的全自定义读写存储器体系结构,该体系结构最适合在亚阈值区域运行。从不同锁存器结构的最小工作电源电压比较开始,讨论了完整的字节可寻址存储器设计。我们进一步分析了应用程序及其不同参数下的性能结果。给出了0.18 μm工艺的所有设计参数和仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra low power 128 byte memory design based on D-Latch in 0.18 µm process
This work mainly presents a novel 128 byte full custom memory array based on D-Latch. A robust full custom read write memory architecture is proposed that is best suited to operate in the sub-threshold region. Starting with different latch architectures minimum operating supply voltage comparison, the complete byte addressable memory design has been discussed. We further analyse the performance results under an application and its different parameters. All the design parameters and the simulation results are presented for 0.18 μm process.
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