6H-SiC氧化物斜坡轮廓(ORP) Schottky结构的MEDICI模拟

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557433

G. Brezeanu, J. Fernandez, J. Millán, J. Rebollo, M. Badila, G. Dilimot, P. Lungu

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引用次数: 2

摘要

本文报道了利用氧化斜坡蚀刻技术衰减边缘效应的6H-SiC肖特基结构的MEDICI模拟。仿真结果表明，在阻塞电压为300 V时，在肖特基结构下可以获得均匀的反向电流密度和体积击穿，斜坡角最大为5°，斜坡角为1 /spl mu/m。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MEDICI simulation of 6H-SiC oxide ramp profile (ORP) Schottky structure

A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 /spl mu/m oxide.

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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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