X-Ku宽带宽GaN HEMT MMIC放大器，输出功率和PAE偏差小

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978586

Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, N. Okamoto, Masaru Sato, S. Masuda, Keiji Watanabe

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引用次数: 5

摘要

提出了一种新的设计方法来获得宽带和平群延迟反应匹配GaN HEMT MMIC放大器。推导了GaN HEMT最优源阻抗和负载阻抗的频率依赖关系为多项式方程，采用小信号仿真方法设计了匹配电路，而不使用大信号晶体管模型和大信号仿真。制备的GaN HEMT MMIC放大器在8-18 GHz范围内显示出较小的Pout和PAE偏差，证明了我们的方法适用于宽带MMIC放大器的设计。

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X-Ku Wide-Bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE

A new design methodology was proposed to obtain wide-bandwidth and flat-group-delay reactive-matching GaN HEMT MMIC amplifiers. Frequency dependence of the optimal source and load impedance of a GaN HEMT are derived as polynomial equations and matching circuits are designed by small signal simulation without the use of large-signal transistor model and large-signal simulation. Fabricated GaN HEMT MMIC amplifiers, which show a small deviation of Pout and PAE in the range of 8-18 GHz, prove that our methodology is suitable for the design of a wide-bandwidth MMIC amplifier.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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