CMOS电路中嵌入式PTAT温度传感器的参数辨识

2007 14th International Conference on Mixed Design of Integrated Circuits and Systems Pub Date : 2007-06-21 DOI:10.1109/MIXDES.2007.4286190

A. Golda, A. Kos

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引用次数: 5

摘要

本文描述了PTAT (proportional to absolute temperature，绝对温度比例)温度传感器在CMOS集成电路测试芯片上的参数辨识结果。他们的操作原理是基于垂直PNP结构。这些传感元件均匀地分布在芯片表面。该芯片专门用于分析和验证微电子VLSI电路中的各种电热现象，采用CMOS 0.7 mum技术制造。测量在温度范围为288-358 K的热室中进行。温度传感器的灵敏度在以下范围内3.44至4.82 mV/K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Parameters Identification of Embedded PTAT Temperature Sensors for CMOS Circuits

In this paper, we describe the parameters identification results of PTAT (proportional to absolute temperature) temperature sensors that are implemented in the test chip and dedicated to CMOS integrated circuits. Theirs principles of operation are based on the vertical PNP structure. These sensing elements are uniformly distributed on the chip surface. The chip is dedicated to analyses and verifications of various electro-thermal phenomena in microelectronic VLSI circuits and is fabricated in CMOS 0.7 mum technology. The measurements were performed in a thermal chamber for the temperature range of 288-358 K. The achieved sensitivities of the temperature sensors are within following limits 3.44 to 4.82 mV/K.

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2007 14th International Conference on Mixed Design of Integrated Circuits and Systems

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