用于射频放大器的大功率LDMOS晶体管

2007 International Bhurban Conference on Applied Sciences & Technology Pub Date : 2007-11-12 DOI:10.1109/IBCAST.2007.4379896

A. Kashif, C. Svensson, Q. Wahab

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引用次数: 2

摘要

利用Sentaurus TCAD软件对横向扩散Si-MOSFET (LDMOS)晶体管进行了仿真和优化。通过在还原表面场(RESURF)区域引入过量的界面电荷密度，获得了1.5 W/mm的功率密度和45%的功率附加效率(PAE)。增益为20.3 dB。这些结果表明，在复用区引入过量的界面电荷密度可以提高射频性能。

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High Power LDMOS Transistor for RF-Amplifiers

We designed simulated and optimized laterally diffused Si-MOSFET (LDMOS) transistors in Sentaurus TCAD software. By introducing excess interface charge density at the RESURF (reduced surface field) region, a power density 1.5 W/mm with a PAE (power added efficiency) of 45% at 3 GHz were obtained. The gain was 20.3 dB. These results show the enhancement in RF performance by introducing excess interface charge density at the RESURF region.

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来源期刊

2007 International Bhurban Conference on Applied Sciences & Technology

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