40 GHz宽带光接收器，将多模波导光电二极管倒装在基于gaas的HEMT分布式放大器上

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.863275

A. Leven, V. Hurm, W. Bronner, K. Kohler, H. Walcher, R. Kiefer, J. Fleissner, J. Rosenzweig, M. Schlechtweg

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引用次数: 4

摘要

提出了一种带宽为40 GHz、波长为1.55 /spl mu/m的高速数字和微波光纤光接收机。该光电接收器由一个GaInAs/AlGaInAs/AlInAs多模波导光电二极管倒装片结合在gaas基伪晶HEMT分布式放大器上组成。整体转换增益高达167 V/W。

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40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier

A 40 GHz bandwidth, 1.55 /spl mu/m wavelength photoreceiver for high-speed digital and microwave-via-fiber applications is presented. The photoreceiver consists of a GaInAs/AlGaInAs/AlInAs multimode waveguide photodiode flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifier. The overall conversion gain is as high as 167 V/W.

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2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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