0.18µm SiGe BiCMOS中w波段探测器的设计与分析

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422987

Le Zheng, L. Gilreath, V. Jain, P. Heydari

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引用次数: 22

摘要

本文介绍了一种毫米波w波段功率探测器的分析、设计与实现。该探测器电路采用0.18µm SiGe BiCMOS工艺制作，响应率为91 kV/W，噪声等效功率为0.5 pW/Hz，噪声系数为29 dB。探测器的功耗为75µW。仿真结果与实测结果吻合较好。据作者所知，这项工作中的探测器实现了迄今为止任何固态w波段探测器的最高响应率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and analysis of a W-Band detector in 0.18-µm SiGe BiCMOS

This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-µm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz, and a noise figure of 29 dB. The power dissipation of the detector is 75 µW. Reasonable agreement between simulations and measurements is obtained. To the authors' best knowledge, the detector in this work achieves the highest responsivity reported to date for any solid-state W-band detector.

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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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