T. Reed, Z. Griffith, P. Rowell, M. Field, M. Rodwell
{"title":"214ghz下180mW InP HBT功率放大器MMIC","authors":"T. Reed, Z. Griffith, P. Rowell, M. Field, M. Rodwell","doi":"10.1109/CSICS.2013.6659187","DOIUrl":null,"url":null,"abstract":"A solid state power amplifier MMIC is demonstrated with 180mW of saturated output power at 214GHz, from an unthinned die, and a small signal S21 gain of 22.0dB. 3-dB bandwidth extends from below 210GHz to 230GHz. PDC is 12.9W. PA Cell design uses a 250nm InP HBT process and a novel three-port tuning network. Three levels of on-wafer power combining in 5μm BCB microstrip are used to combine 16 PA cells in a power amplifier MMIC. The result is a 4x increase in output periphery versus the previous state-of-the-art for InP HBT power amplifier MMICs designed for 220GHz.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"A 180mW InP HBT Power Amplifier MMIC at 214 GHz\",\"authors\":\"T. Reed, Z. Griffith, P. Rowell, M. Field, M. Rodwell\",\"doi\":\"10.1109/CSICS.2013.6659187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A solid state power amplifier MMIC is demonstrated with 180mW of saturated output power at 214GHz, from an unthinned die, and a small signal S21 gain of 22.0dB. 3-dB bandwidth extends from below 210GHz to 230GHz. PDC is 12.9W. PA Cell design uses a 250nm InP HBT process and a novel three-port tuning network. Three levels of on-wafer power combining in 5μm BCB microstrip are used to combine 16 PA cells in a power amplifier MMIC. The result is a 4x increase in output periphery versus the previous state-of-the-art for InP HBT power amplifier MMICs designed for 220GHz.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A solid state power amplifier MMIC is demonstrated with 180mW of saturated output power at 214GHz, from an unthinned die, and a small signal S21 gain of 22.0dB. 3-dB bandwidth extends from below 210GHz to 230GHz. PDC is 12.9W. PA Cell design uses a 250nm InP HBT process and a novel three-port tuning network. Three levels of on-wafer power combining in 5μm BCB microstrip are used to combine 16 PA cells in a power amplifier MMIC. The result is a 4x increase in output periphery versus the previous state-of-the-art for InP HBT power amplifier MMICs designed for 220GHz.
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