用于新型太赫兹发射器的纳米结构中的弹道输运

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237245

G. Dohler, M. Eckardt, A. Schwanhauber, F. Renner, L. Robledo, A. Friedrich, P. Pohl, S. Malzer, P. Kiesel, D. Driscoll, M. Hanson, A. Gossard

{"title":"用于新型太赫兹发射器的纳米结构中的弹道输运","authors":"G. Dohler, M. Eckardt, A. Schwanhauber, F. Renner, L. Robledo, A. Friedrich, P. Pohl, S. Malzer, P. Kiesel, D. Driscoll, M. Hanson, A. Gossard","doi":"10.1109/COMMAD.2002.1237245","DOIUrl":null,"url":null,"abstract":"We report on a novel concept for THz-photomixers with strongly increased conversion efficiency. In the familiar THz photomixers, based on photoconductivity in \"Low-temperature-grown-GaAs\" (LT-GaAs) the performance depends critically on an extremely short lifetime of photo-generated charge carriers in LT-GaAs and is typically limited by the (very low) photoconductive gain. In our photomixer the gain does not depend on the recombination lifetime but only on the transit time and on the path length of the photo-generated electrons within suitably designed p-i-n /spl I.bar/ nanostructures, which both can be optimized if the transport is (primarily) ballistic. In addition, impedance matching to the attached antenna can be achieved.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ballistic transport in nanostructures used for novel THz emitters\",\"authors\":\"G. Dohler, M. Eckardt, A. Schwanhauber, F. Renner, L. Robledo, A. Friedrich, P. Pohl, S. Malzer, P. Kiesel, D. Driscoll, M. Hanson, A. Gossard\",\"doi\":\"10.1109/COMMAD.2002.1237245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a novel concept for THz-photomixers with strongly increased conversion efficiency. In the familiar THz photomixers, based on photoconductivity in \\\"Low-temperature-grown-GaAs\\\" (LT-GaAs) the performance depends critically on an extremely short lifetime of photo-generated charge carriers in LT-GaAs and is typically limited by the (very low) photoconductive gain. In our photomixer the gain does not depend on the recombination lifetime but only on the transit time and on the path length of the photo-generated electrons within suitably designed p-i-n /spl I.bar/ nanostructures, which both can be optimized if the transport is (primarily) ballistic. In addition, impedance matching to the attached antenna can be achieved.\",\"PeriodicalId\":129668,\"journal\":{\"name\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2002.1237245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一种新的太赫兹光电混合器的概念，其转换效率大大提高。在我们熟悉的太赫兹光电混合器中，基于“低温生长的砷化镓”(LT-GaAs)的光电性，其性能主要取决于LT-GaAs中光生成电荷载流子的极短寿命，并且通常受到(非常低的)光电性增益的限制。在我们的光电混合器中，增益不依赖于复合寿命，而只依赖于光生电子在适当设计的p-i-n /spl I.bar/纳米结构中的传输时间和路径长度，如果传输(主要)是弹道传输，则两者都可以优化。此外，还可以实现与所附天线的阻抗匹配。

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Ballistic transport in nanostructures used for novel THz emitters

We report on a novel concept for THz-photomixers with strongly increased conversion efficiency. In the familiar THz photomixers, based on photoconductivity in "Low-temperature-grown-GaAs" (LT-GaAs) the performance depends critically on an extremely short lifetime of photo-generated charge carriers in LT-GaAs and is typically limited by the (very low) photoconductive gain. In our photomixer the gain does not depend on the recombination lifetime but only on the transit time and on the path length of the photo-generated electrons within suitably designed p-i-n /spl I.bar/ nanostructures, which both can be optimized if the transport is (primarily) ballistic. In addition, impedance matching to the attached antenna can be achieved.

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来源期刊

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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