{"title":"纳米双栅mosfet中量子输运模拟的部分耦合模式空间","authors":"M. El-Banna, Y. Sabry, W. Fikry, O. A. Omar","doi":"10.1109/ICM.2010.5696145","DOIUrl":null,"url":null,"abstract":"A novel computationally efficient approach for simulation of quantum transport in nanoscale devices is proposed. The idea is based on partial coupling between the modes of the nanoscale device. The proposed approach, termed Partial-Coupled Mode Space (PCMS), is applied to the double-gate MOSFETs and device targets from the ITRS roadmap were simulated. A Comparison with the fully Coupled-Mode Space (CMS) was carried out. The PCMS reduces more than 65 % of the computational burden while an accuracy of better than 0.1 % and 0.01 % is maintained in the device charge and terminal current respectively.","PeriodicalId":215859,"journal":{"name":"2010 International Conference on Microelectronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Partial-Coupled Mode Space for quantum transport simulation in nanoscale double-gate MOSFETs\",\"authors\":\"M. El-Banna, Y. Sabry, W. Fikry, O. A. Omar\",\"doi\":\"10.1109/ICM.2010.5696145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel computationally efficient approach for simulation of quantum transport in nanoscale devices is proposed. The idea is based on partial coupling between the modes of the nanoscale device. The proposed approach, termed Partial-Coupled Mode Space (PCMS), is applied to the double-gate MOSFETs and device targets from the ITRS roadmap were simulated. A Comparison with the fully Coupled-Mode Space (CMS) was carried out. The PCMS reduces more than 65 % of the computational burden while an accuracy of better than 0.1 % and 0.01 % is maintained in the device charge and terminal current respectively.\",\"PeriodicalId\":215859,\"journal\":{\"name\":\"2010 International Conference on Microelectronics\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2010.5696145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2010.5696145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Partial-Coupled Mode Space for quantum transport simulation in nanoscale double-gate MOSFETs
A novel computationally efficient approach for simulation of quantum transport in nanoscale devices is proposed. The idea is based on partial coupling between the modes of the nanoscale device. The proposed approach, termed Partial-Coupled Mode Space (PCMS), is applied to the double-gate MOSFETs and device targets from the ITRS roadmap were simulated. A Comparison with the fully Coupled-Mode Space (CMS) was carried out. The PCMS reduces more than 65 % of the computational burden while an accuracy of better than 0.1 % and 0.01 % is maintained in the device charge and terminal current respectively.
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