{"title":"用于电子镇流器的智能功率晶体管","authors":"N. Aiello, A. L. La Barbera, S. Sueri, V. Sukumar","doi":"10.1109/APEC.1997.581451","DOIUrl":null,"url":null,"abstract":"A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages.","PeriodicalId":423659,"journal":{"name":"Proceedings of APEC 97 - Applied Power Electronics Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Smart power transistors for electronic ballasts\",\"authors\":\"N. Aiello, A. L. La Barbera, S. Sueri, V. Sukumar\",\"doi\":\"10.1109/APEC.1997.581451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages.\",\"PeriodicalId\":423659,\"journal\":{\"name\":\"Proceedings of APEC 97 - Applied Power Electronics Conference\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-02-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of APEC 97 - Applied Power Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1997.581451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of APEC 97 - Applied Power Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1997.581451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages.
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