量子阱中激子-光耦合的数值研究

P. Belov, E. Khramtsov, P. S. Grigoryev, I. Ignatiev
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引用次数: 0

摘要

激光耦合是辐射衰减率定量描述的一个重要特性。近年来对高质量量子阱辐射衰减率的实验研究表明,实验数据存在差异,特别是窄量子阱。因此,作为光波和激子波函数重叠的激子-光耦合的理论和数值研究具有重要的意义。在本文中,我们给出了从1nm到100nm不同宽度的gaas基量子阱中激子的辐射衰减率。激子波函数是通过三维Schrödinger方程的直接数值解来计算的。用有限差分格式进行哈密顿离散,得到了最低激子态的精确结果。数值结果与高质量GaAs/AlGaAs和InGaAs/GaAs异质结构的反射光谱实验数据进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical study of the exciton-light coupling in quantum wells
The exciton-light coupling is an important characteristic quantitatively described by the radiative decay rate. Recent experimental studies of the radiative decay rate for high-quality quantum wells show a variance of the experimental data especially for narrow quantum wells. Therefore, the theoretical and numerical studies of the exciton-light coupling as an overlap of the light wave and the exciton wave function are of significant interest. In this paper, we present the radiative decay rates obtained for excitons in the GaAs-based quantum wells of various widths from 1 nm up to 100 nm. The exciton wave function is calculated by the direct numerical solution of the three-dimensional Schrödinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the finite-difference scheme. The numerical results are compared with the experimental data extracted from the reflectance spectroscopy measurements for high-quality GaAs/AlGaAs and InGaAs/GaAs heterostructures.
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