最近在ASET的EUV光刻技术的发展活动

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872749

S. Okazaki

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引用次数: 1

摘要

EUV光刻技术是制造70纳米及以下特征尺寸器件的最有前途的候选技术。自1998年10月以来，ASET一直与姬路工业大学木下教授合作，致力于EUV光刻基础技术的开发。这些技术可分为三大类:曝光系统、多层掩模和抗蚀工艺。

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Recent activities in the development of EUV lithography at ASET

EUV lithography is the most promising candidate for the fabrication of devices with feature sizes of 70 nm and below. Since October, 1998, ASET has been working on the development of the basic technologies of EUV lithography in cooperation with Prof. H.Kinoshita of the Himeji Institute of Technology. These technologies can be broken down into three categories: exposure system, multilayer mask, and resist process.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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