{"title":"用于兆位/秒光网络的飞秒全光器件","authors":"O. Wada","doi":"10.1109/IEDM.2000.904389","DOIUrl":null,"url":null,"abstract":"Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of communication network throughput to enter the 1 Tb/s to 10 Tb/s range. This paper discusses the requirements of optoelectronic devices operating in the femtosecond time domain and reviews recent progress of novel devices, such as femtosecond devices for ultrashort pulse generation, compression and switching.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Femtosecond all-optical devices for tera-bit/sec optical networks\",\"authors\":\"O. Wada\",\"doi\":\"10.1109/IEDM.2000.904389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of communication network throughput to enter the 1 Tb/s to 10 Tb/s range. This paper discusses the requirements of optoelectronic devices operating in the femtosecond time domain and reviews recent progress of novel devices, such as femtosecond devices for ultrashort pulse generation, compression and switching.\",\"PeriodicalId\":276800,\"journal\":{\"name\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2000.904389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Femtosecond all-optical devices for tera-bit/sec optical networks
Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of communication network throughput to enter the 1 Tb/s to 10 Tb/s range. This paper discusses the requirements of optoelectronic devices operating in the femtosecond time domain and reviews recent progress of novel devices, such as femtosecond devices for ultrashort pulse generation, compression and switching.