用于CDMA手机应用的功率放大器的热特性

T. Nozu
{"title":"用于CDMA手机应用的功率放大器的热特性","authors":"T. Nozu","doi":"10.1109/STHERM.2005.1412179","DOIUrl":null,"url":null,"abstract":"Thermal characterization of InGaP/GaAs HBT power amplifiers for CDMA cellular phone handsets has been demonstrated on the basis of DC measurements of the HBTs and 3D finite element modeling, which made the treatment of non-uniform heat flow in this problem possible. Evaluation of conductive adhesives in the actual power amplifier environment has also been carried out. The finite element modeling including thermal contact resistance was applied to the HBTs with various numbers of emitter fingers and good agreement with measurements was obtained. For an adhesive with a high thermal conductance, it was found that 1/3 of the total thermal resistance of the power amplifier was attributable to the contact thermal resistance around GaAs/adhesive/heat sink bond line and that the bulk thermal contribution was negligible.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermal characterization of power amplifiers for CDMA cellular phone applications\",\"authors\":\"T. Nozu\",\"doi\":\"10.1109/STHERM.2005.1412179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal characterization of InGaP/GaAs HBT power amplifiers for CDMA cellular phone handsets has been demonstrated on the basis of DC measurements of the HBTs and 3D finite element modeling, which made the treatment of non-uniform heat flow in this problem possible. Evaluation of conductive adhesives in the actual power amplifier environment has also been carried out. The finite element modeling including thermal contact resistance was applied to the HBTs with various numbers of emitter fingers and good agreement with measurements was obtained. For an adhesive with a high thermal conductance, it was found that 1/3 of the total thermal resistance of the power amplifier was attributable to the contact thermal resistance around GaAs/adhesive/heat sink bond line and that the bulk thermal contribution was negligible.\",\"PeriodicalId\":256936,\"journal\":{\"name\":\"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.2005.1412179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2005.1412179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

基于直流测量和三维有限元建模,证明了用于CDMA手机的InGaP/GaAs HBT功率放大器的热特性,从而使该问题中的非均匀热流处理成为可能。对导电胶粘剂在实际功放环境下的性能进行了评价。将包括接触热阻在内的有限元模型应用于具有不同射极指数的hbt,得到了与测量值较好的吻合。对于高导热的胶粘剂,发现功率放大器总热阻的1/3可归因于GaAs/胶粘剂/散热器粘合线周围的接触热阻,而体热贡献可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal characterization of power amplifiers for CDMA cellular phone applications
Thermal characterization of InGaP/GaAs HBT power amplifiers for CDMA cellular phone handsets has been demonstrated on the basis of DC measurements of the HBTs and 3D finite element modeling, which made the treatment of non-uniform heat flow in this problem possible. Evaluation of conductive adhesives in the actual power amplifier environment has also been carried out. The finite element modeling including thermal contact resistance was applied to the HBTs with various numbers of emitter fingers and good agreement with measurements was obtained. For an adhesive with a high thermal conductance, it was found that 1/3 of the total thermal resistance of the power amplifier was attributable to the contact thermal resistance around GaAs/adhesive/heat sink bond line and that the bulk thermal contribution was negligible.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信