用于实际大规模集成电路的二维MX2材料的位置控制和气源CVD生长技术

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421437

T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata

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引用次数: 1

摘要

我们已经证明了位置控制CVD生长金属二硫化物(WS2和SnS2)使用图像化的Si衬底。发现阶梯边有效地诱导了二维材料的晶体成核，并由此进行横向晶体生长。开发了适用于工业生产的气源CVD系统，并确定了WS2和SnS2的合成方法。

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Position Control and Gas Source CVD Growth Technologies of 2D MX2 Materials for Real LSI Applications

We have demonstrated position controlled CVD growth of metal dichacogenide (WS2 and SnS2) by using patterned Si substrates. It was found that step edges effectively induced crystal nucleation and lateral crystal growth of 2D materials proceeded from there. Gas source CVD system applicable to industrial production has also been developed and WS2 and SnS2 synthesis have been confirmed.

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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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